Samsung Unveils HBM4E Memory with Multiple Stack Options
Samsung reportedly introduces high-bandwidth memory with varying densities and production plans.
According to reports, Samsung has unveiled its latest High Bandwidth Memory (HBM) product, the HBM4E. The company is offering the memory in a 12-layer configuration with a density of 48 GB per stack. Additional options are expected to include 8-layer stacks with 32 GB and 16-layer stacks with 64 GB.
Samsung has distributed samples since May, with total volume production anticipated to reach around 20,000 wafers per month in 2026, increasing to 50,000 wafers per month in 2027. The company has reportedly dedicated half of its 4 nm SF4 node production to HBM4E base die manufacturing.
Samsung declined to verify the report, stating it could not confirm whether the HBM4E qualification had been completed.
Key facts
- 12-layer HBM4E configuration with 48 GB per stack
- Production expected to reach 50,000 wafers/month by 2027
- Samples distributed since May
Sources
- WccftechSamsung’s 12-Hi HBM4E Reportedly Passes NVIDIA Qualification, Paving Way For Next-Gen AI GPU Supply
- TechPowerUpSamsung HBM4E Passes Testing for NVIDIA's "Rubin Ultra" GPU
